Area penerapan
Proses implant ion(ion implant), proses pengabuan(ashing), proses epi, proses pengendapan uap kimia(CVD), penyaring gas asam seperti HCl, HF, HBr, BCl3 dan lain-lain
Kekhususan produk
Appearance
Mekanisme reaksi
Gas | Mechanism | TLV (ppm) |
---|---|---|
BCl3 | BCl3 + 3MOH → 3MCl + B(OH)3 | 5 |
BCl3 + 3MO(OH) → 3MOCl + B(OH) | ||
HBr | 2HBr + M(OH)2 → MBr2+ 2H2O | 3 |
HCl | 3HCl + MO(OH) →MCl3 + 2H2O | 5 |
HF | 6HF + M2O3 → 2MF3 + 3H2O | 3 |
SiH4 | SiH4 + 2MOH →M2Si + 2H2O + H2 | 5 |