Area penerapan
Proses implant ion(ion implant), proses pengabuan(ashing), proses epi, proses pengendapan uap kimia(CVD), penyaring gas SiH4 dan lain-lain
Kekhususan produk
Appearance
Mekanisme reaksi
Gas | Mechanism | TLV (ppm) |
---|---|---|
SiH4 | SiH4 + 2MOH → M2Si + 2H2O + H2 | 5 |